r 20 1 510d 1 / 9 n ??? n - channel mosfet j cs 40 n 2 5 t order codes ? marking ? package halogen free ? packaging device weight jcs 40 n 2 5 w t - o - w - n - b jcs 40 n 2 5 w t to - 2 47 no tube 6.1 0 g(typ) jcs 40 n 25ant - o - an - n - b jcs 40 n 25ant to - 3pn no tube 5.73 g(typ) ? package ? main characteristics i d 40 a v dss 25 0 v rdson - max @vgs=10v 68m ? qg - typ 87 nc ? ? ??? ? ? ups ? applications ? high efficiency switch mode power supplies ? electronic lamp ballasts based on half bridge ? ups ? ? ? ? c rss ( ? 8 2 pf ) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typica l 82 pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capa bility ? rohs product ? order message
r jcs 40 n 2 5 t 20 1 510d 2 / 9 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? parameter symbol ? value unit jcs40n25w t / an t ? ??? drain - source voltage v dss 250 v ? drain current - continuous i d t=25 t=100 40 a 25 a ? ? 1 drain current - pulse note 1 i dm 160 a ??? gate - source voltage v gss 30 v ? ? 2 single pulsed avalanche energy note 2 e as 88 0 mj ? ? 1 avalanche current note 1 i ar 40 a ?? ? 1 repetitive avalanche current note 1 e ar 26 mj ??? ? 3 peak diode recovery dv/dt note 3 dv/dt 5. 4 v/ns ? power dissipation p d t c =25 - derate above 25 260 w 2. 08 w/ ??? operating and storage temperature range t j t stg - 55 +150 ?? maximum lead temperature for soldering purposes t l 300
r jcs 40 n 2 5 t 20 1 510d 3 / 9 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off C characteristics ? ?? dra in - source voltage bv dss i d =250 a, v gs =0v 25 0 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0. 26 - v/ ???? zero gate voltage drain current i dss v ds = 25 0v,v gs =0v, t c =25 - - 1 a v ds = 20 0v, t c =12 5 - - 1 0 a ?? gate - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =25 0 a 2 .0 - 4. 0 v ?? static drain - source on - resistance r ds(on) v gs =10v , i d = 20 a - 47 68 m ? forward transconductance g fs v ds = 40v, i d = 20 a note 4 - 27 - s ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 3 350 4210 pf output capacitance c oss - 685 867 pf reverse transfer capacitance c rss - 82 105 pf
r jcs 40 n 2 5 t 20 1 510d 4 / 9 e lectrical c haracteristics t hermal characte ristic switching characteristics ?? turn - on delay time t d (on) v dd = 125 v,i d = 40 a,r g =25? v gs =10v note 4 5 - 81 112 ns ? turn - on rise time t r - 620 950 ns ?? turn - off delay time t d (off) - 142 189 ns ?? turn - off fall time t f - 183 235 ns ? total gate charge q g v ds = 2 0 0v , i d = 40 a v gs =10v note 4 5 - 8 7 1 13 nc ? ? gate - source ch arge q gs - 2 5 - nc ? ? gate - drain charge q gd - 4 4 - nc ? ???? drain - source diode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 40 a maximum pulsed drain - source diode for ward current i sm - - 160 a ? drain - source diode forward voltage v sd v gs =0v, i s = 40 a - - 1. 5 v ?? reverse recovery time t rr v gs =0v, i s = 40 a di f /dt=100a/ s (note 4) - 234 - ns ? reverse recovery charge q rr - 2.15 - c ? parameter symbol max unit jcs40n25 wt/an t ??? thermal resistance, junction to case r th(j - c) 0.4 8 /w ? thermal resistance, junction to ambient r th(j - a) 62.5 /w ? 1 ? 2 l = 1.1 mh, i as = 40 a, v dd = 50 v, r g =25 ?, ? t j =25 3 i sd 40 a,di/dt 3 00a/ s,vddbv dss , ? t j =25 4 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 1.1 mh, i as = 40 a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 40 a,di/dt 3 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,duty cycle2 5 essentially independent of operating temperature
r jcs 40 n 2 5 t 20 1 510d 5 / 9 electrical characteristics (curves ) 0.1 1 10 0.01 0.1 1 10 100 v gs top 15v 10v 9v 8v 7v 6.5v 6v 5.5v bottom 5v notes: 1. 250s pulse test 2. t c = 2 5 i d [a] v d s [v] 2 4 6 8 10 0.1 1 10 100 notes: 1.250s pulse test 2.v ds =40v 25 i d [a] v gs [v] 150 0 20 40 60 80 100 120 0.05 0.10 0.15 0.20 note:t j = 2 5 v gs =10v v gs =20v r d s (on ) [ ] i d [a] 0.1 1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 notes: 1. 250s pulse test 2. v gs =0v 2 5 1 5 0 v s d [v] i dr [a] 10 -1 10 0 10 1 0 1x10 3 2x10 3 3x10 3 4x10 3 5x10 3 6x10 3 7x10 3 c rss c oss c iss c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v d s drain-source voltage [v] 0 2 4 6 8 10 12 0 10 20 30 40 50 60 70 80 90 100 notes: i d =40a v ds =200v v ds =125v v ds =50v q g toltal gate charge [nc] v gs gate source voltage[v] on - region characteristics transfer characteristics on - resistance variation vs. drain current and gate voltage body diode forward voltage variation v s. source current and temperature capacitance characteristics gate charge characteristics
r jcs 40 n 2 5 t 20 1 510d 6 / 9 electrical characteristics (curves) -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes: 1. v g s =0v 2. i d =250a bv ds (normalized) t j [ ] -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 notes: 1. v gs =10v 2. i d =20a r d ( on ) (normalized) t j [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) note: 1 t c = 2 5 2 t j = 1 5 0 3 single pulse 10s 1ms 100s 10ms 100ms dc i d drain current [a] v ds drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 i d drain current [a] t c c a s e t e m p e r a t u r e [ ] 1 e - 5 1 e - 4 1 e - 3 0 . 0 1 0 . 1 1 1 0 0 . 0 1 0 . 1 1 t 2 t 1 d = 0 . 5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 z jc (t) thermal response t 1 s q u a r e w a v e p u l s e d u r a t i o n [ s e c ] s i n g l e p u ls e 0 . 0 1 n o t e s : 1 z j c ( t ) = 0 . 4 8 / w m a x 2 d u t y f a c t o r , d = t 1 / t 2 3 t j m - t c = p d m * z j c ( t ) p d m breakdown voltage variation vs. temperature on - resistance variation vs. temperature maximum drain current vs. case temperature maximum safe operating area transient thermal respon se curve
r jcs 40 n 2 5 t 20 1 510d 7 / 9 ? package mechanical data to - 2 47 u nit mm
r jcs 40 n 2 5 t 20 1 510d 8 / 9 ? package mechanical data to - 3pn u nit mm
r jcs 40 n 2 5 t 20 1 510d 9 / 9 ? 1. ?? ??????? ??? ?? ???? 2. ??? ? ?? 3. ????? ?? ??? 4 . ??? note 1. jilin sino - microelectronics co., ltd sales its product either through dire ct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ?? ?? 99 ? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ? ?? 99 ? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 - 3 0 9 8 /3 0 9 9 : 86 - 432 - 6 4671533 contact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwdz.com.cn market dep artment add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 64675688 6 4678411 - 3098/3099 fax: 86 - 432 - 6 4671533
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